制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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TSM60NB041PW600V, 78A, SINGLE N-CHANNEL POWE |
3,056 | - |
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- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 78A (Tc) | 10V | 41mOhm @ 21.7A, 10V | 4V @ 250µA | 139 nC @ 10 V | ±30V | 6120 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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G3R30MT12JSIC MOSFET N-CH 96A TO263-7 |
4,159 | - |
|
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G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 96A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 459W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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IXFX180N10MOSFET N-CH 100V 180A PLUS247 |
3,626 | - |
|
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HiPerFET™ | TO-247-3 Variant | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 390 nC @ 10 V | ±20V | 10900 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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2N6660MOSFET N-CH 60V 990MA TO205AD |
3,655 | - |
|
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- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
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2N6660-E3MOSFET N-CH 60V 990MA TO205AD |
2,395 | - |
|
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- | TO-205AD, TO-39-3 Metal Can | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
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APT40SM120SSICFET N-CH 1200V 41A D3PAK |
2,012 | - |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | +25V, -10V | 2560 pF @ 1000 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT94N65B2C6MOSFET N-CH 650V 95A T-MAX |
3,878 | - |
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- |
- | TO-247-3 Variant | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 35mOhm @ 35.2A, 10V | 3.5V @ 3.5mA | 320 nC @ 10 V | ±20V | 8140 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT41M80B2MOSFET N-CH 800V 43A T-MAX |
2,350 | - |
|
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POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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IXFK44N55QMOSFET N-CH 550V 44A TO264AA |
4,119 | - |
|
- |
HiPerFET™, Q Class | TO-264-3, TO-264AA | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 4.5V @ 4mA | 190 nC @ 10 V | ±20V | 6400 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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APT6021BLLGMOSFET N-CH 600V 29A TO247 |
2,544 | - |
|
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POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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IXFN280N07MOSFET N-CH 70V 280A SOT-227B |
4,365 | - |
|
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HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 70 V | 280A (Tc) | 10V | 5mOhm @ 120A, 10V | 4V @ 8mA | 420 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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DMWSH120H23SM3LINEAR IC |
3,191 | - |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 100A (Tc) | 15V, 18V | 23mOhm @ 50A, 18V | 3.6V @ 17.7mA | 217 nC @ 18 V | +22V, -10V | 3962 pF @ 1000 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DMWSH120H23SM4LINEAR IC |
3,859 | - |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 100A (Tc) | 15V, 18V | 23mOhm @ 50A, 18V | 3.6V @ 17.7mA | 217 nC @ 18 V | +22V, -10V | 3962 pF @ 1000 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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UJ4SC075010L8SSR750V/10MO,SICFET,G4,TOLL |
4,724 | - |
|
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- | 8-PowerSFN | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
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IXFL60N60MOSFET N-CH 600V 60A ISOPLUS264 |
4,041 | - |
|
- |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 80mOhm @ 30A, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
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IRFPS40N50LMOSFET N-CH 500V 46A SUPER247 |
4,033 | - |
|
- |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 250µA | 380 nC @ 10 V | ±30V | 8110 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
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IXFK30N110PMOSFET N-CH 1100V 30A TO264AA |
3,042 | - |
|
- |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 30A (Tc) | 10V | 360mOhm @ 15A, 10V | 6.5V @ 1mA | 235 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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APT10090SLLGMOSFET N-CH 1000V 12A D3PAK |
4,112 | - |
|
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POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | - | 900mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | - | 1969 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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IXFX140N60X3DISCRETE MOSFET 140A 600V X3 PLU |
3,433 | - |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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APT8024LVRGMOSFET N-CH 800V 33A TO264 |
2,830 | - |
|
- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 240mOhm @ 16.5A, 10V | 4V @ 2.5mA | 425 nC @ 10 V | - | 7740 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |