制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
APT1201R4BLLGMOSFET N-CH 1200V 9A TO247 |
4,239 | - |
|
- |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 2500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
![]() |
IXFE48N50QMOSFET N-CH 500V 41A SOT-227B |
4,523 | - |
|
- |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
APT20M45SVFRGMOSFET N-CH 200V 56A D3PAK |
4,899 | - |
|
![]() Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | - | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | - | 4860 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
![]() |
APT6029BFLLGMOSFET N-CH 600V 21A TO247 |
2,922 | - |
|
![]() Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2615 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
![]() |
IXFT44N50Q3MOSFET N-CH 500V 44A TO268 |
3,918 | - |
|
![]() Tabla de datos |
HiPerFET™, Q3 Class | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 6.5V @ 4mA | 93 nC @ 10 V | ±30V | 4800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
![]() |
IXFT18N100Q3MOSFET N-CH 1000V 18A TO268 |
2,823 | - |
|
![]() Tabla de datos |
HiPerFET™, Q3 Class | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 660mOhm @ 9A, 10V | 6.5V @ 4mA | 90 nC @ 10 V | ±30V | 4890 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
![]() |
IXFR34N80MOSFET N-CH 800V 28A ISOPLUS247 |
3,362 | - |
|
- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 28A (Tc) | 10V | 240mOhm @ 17A, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
![]() |
IXTR140P10TMOSFET P-CH 100V 110A ISOPLUS247 |
3,339 | - |
|
![]() Tabla de datos |
TrenchP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 13mOhm @ 70A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±15V | 31400 pF @ 25 V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
![]() |
SCT4013DTWSIC FET TOP SIDE COOLING |
4,612 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
LSIC1MO120T0080-TU1200V/80MOHM SIC MOSFET TO-263-7 |
2,040 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
|
APT5017SVRGMOSFET N-CH 500V 30A D3PAK |
3,367 | - |
|
![]() Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 170mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
![]() |
IXFT16N120P-TRLMOSFET N-CH 1200V 16A TO268 |
2,715 | - |
|
- |
HiPerFET™, Polar | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 950mOhm @ 8A, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268 |
![]() |
APT47N60BC3GMOSFET N-CH 600V 47A TO247 |
1 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
![]() |
IXTD5N100AMOSFET N-CH 1000V 5A DIE |
4,475 | - |
|
- |
- | Die | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | Die |
![]() |
APT70SM70BSICFET N-CH 700V 65A TO247 |
3,228 | - |
|
- |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 [B] |
![]() |
APT8065BVFRGMOSFET N-CH 800V 13A TO247 |
3,717 | - |
|
![]() Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
![]() |
IXTH30N25L2MOSFET N-CH 250V 30A TO247 |
3,901 | - |
|
![]() Tabla de datos |
Linear L2™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Tc) | 10V | 140mOhm @ 15A, 10V | 4.5V @ 250µA | 130 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
APT24M120B2MOSFET N-CH 1200V 24A T-MAX |
2 | - |
|
![]() Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 10V | 630mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT29F100LMOSFET N-CH 1000V 30A TO264 |
3,354 | - |
|
![]() Tabla de datos |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 460mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
![]() |
IXTT10N100DMOSFET N-CH 1000V 10A TO268 |
3,064 | - |
|
![]() Tabla de datos |
Depletion | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.4Ohm @ 10A, 10V | 3.5V @ 250µA | 130 nC @ 10 V | ±30V | 2500 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |