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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT24M80SMOSFET N-CH 800V 25A D3PAK |
2,840 |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
GS-065-030-6-LT-MRGS-065-030-6-LT-MR |
3,540 |
|
- |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IGT60R042D1ATMA1GAN HV |
4,180 |
|
- |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | - | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 |
|
APT1204R7SFLLGMOSFET N-CH 1200V 3.5A D3PAK |
2,277 |
|
Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3.5A (Tc) | - | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | - | 715 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
IXTK110N30MOSFET N-CH 300V 110A TO264 |
2,849 |
|
- |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 110A (Tc) | 10V | 26mOhm @ 500mA, 10V | 4V @ 250µA | 390 nC @ 10 V | ±20V | 7800 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
|
APT20M45SVRGMOSFET N-CH 200V 56A D3PAK |
2,415 |
|
Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | - | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | - | 4860 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
|
APT20M38SVRG/TRMOSFET N-CH 200V 67A D3PAK |
4,530 |
|
Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 33.5A, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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IXFR102N30PMOSFET N-CH 300V 60A ISOPLUS247 |
4,401 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 36mOhm @ 51A, 10V | 5V @ 4mA | 224 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
IXFR180N06MOSFET N-CH 60V 180A ISOPLUS247 |
3,413 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 10V | 5mOhm @ 90A, 10V | 4V @ 8mA | 420 nC @ 10 V | ±20V | 7650 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
IXFK20N120MOSFET N-CH 1200V 20A TO264AA |
4,866 |
|
- |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 750mOhm @ 500mA, 10V | 4.5V @ 8mA | 160 nC @ 10 V | ±30V | 7400 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
IGOT60R042D1AUMA2GANFET N-CH |
3,088 |
|
- |
- | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-87 |
|
|
IGO60R042D1AUMA2GAN HV |
4,844 |
|
- |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | - | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-85 |
|
IRFP26N60LMOSFET N-CH 600V 26A TO247-3 |
3,955 |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 250mOhm @ 16A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±30V | 5020 pF @ 25 V | - | 470W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
IXFK90N30MOSFET N-CH 300V 90A TO-264 |
3,244 |
|
Tabla de datos |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 300 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
GAN039-650NTBZ650 V, 33 MOHM GALLIUM NITRIDE ( |
2,355 |
|
- |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 650 V | 58.5A (Tc) | 10V | 39mOhm @ 32A, 10V | 4.6V @ 1mA | 26 nC @ 10 V | ±20V | 1980 pF @ 400 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
|
IXFK32N60MOSFET N-CH 600V 32A TO264AA |
3,045 |
|
Tabla de datos |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 250mOhm @ 500mA, 10V | 4.5V @ 8mA | 325 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
IRFP32N50KMOSFET N-CH 500V 32A TO247-3 |
3,159 |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | 10V | 160mOhm @ 32A, 10V | 5V @ 250µA | 190 nC @ 10 V | ±30V | 5280 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
IXFR12N100MOSFET N-CH 1000V 10A ISOPLUS247 |
4,660 |
|
- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | - | 1.1Ohm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | - | 2900 pF @ 25 V | - | - | - | - | - | Through Hole | ISOPLUS247™ |
|
IXFT15N100QMOSFET N-CH 1000V 15A TO268 |
2,823 |
|
Tabla de datos |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 700mOhm @ 500mA, 10V | 5V @ 4mA | 170 nC @ 5 V | ±20V | 4500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
|
APT1003RSFLLGMOSFET N-CH 1000V 4A D3PAK |
4,135 |
|
- |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | - | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | - | 694 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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