制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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APT10M09B2VFRGMOSFET N-CH 100V 100A T-MAX |
4,524 | - |
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POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | ±30V | 9875 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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IXFK24N100MOSFET N-CH 1KV 24A TO-264AA |
3,017 | - |
|
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HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXTR90P20PMOSFET P-CH 200V 53A ISOPLUS247 |
2,515 | - |
|
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PolarP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 53A (Tc) | 10V | 48mOhm @ 45A, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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APT5015SVFRGMOSFET N-CH 500V 32A D3PAK |
4,526 | - |
|
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POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | 10V | 150mOhm @ 16A, 10V | 4V @ 1mA | 300 nC @ 10 V | ±30V | 5280 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT77N60SC6MOSFET N-CH 600V 77A D3PAK |
4,082 | - |
|
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CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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IGT40R070D1E8220ATMA1GAN N-CH 400V 31A HSOF-8-3 |
4,833 | - |
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CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 400 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | ±10V | 382 pF @ 320 V | - | 125W (Tc) | 0°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-3 |
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IXFN73N30MOSFET N-CH 300V 73A SOT-227B |
3,915 | - |
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HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 300 V | 73A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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3N163MOSFET P-CH 40V 50MA TO72 |
3,079 | - |
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- | TO-206AF, TO-72-4 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-72 |
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3N163-E3MOSFET P-CH 40V 50MA TO72 |
4,651 | - |
|
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- | TO-206AF, TO-72-4 Metal Can | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-72 |
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3N164MOSFET P-CH 30V 50MA TO72 |
3,015 | - |
|
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- | TO-206AF, TO-72-4 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 50mA (Ta) | 20V | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-72 |
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APT70SM70SSICFET N-CH 700V 65A D3PAK |
2,122 | - |
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- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 220W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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IMSQ120R026M2HHXUMA1SIC DISCRETE |
2,566 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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APT47N60SC3GMOSFET N-CH 600V 47A D3PAK |
4,468 | - |
|
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CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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SCTH60N120G2-7SICFET N-CH 1200V 60A H2PAK-7 |
3,636 | - |
|
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- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 10V | 5V @ 1mA | 94 nC @ 18 V | +22V, -10V | 1969 pF @ 800 V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
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IRFP360LCMOSFET N-CH 400V 23A TO247-3 |
2,779 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 3400 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SCT2080KECSICFET N-CH 1200V 40A TO247 |
3,986 | - |
|
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- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |
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IXTX600N04T2MOSFET N-CH 40V 600A PLUS247-3 |
3,591 | - |
|
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TrenchT2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 600A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 3.5V @ 250µA | 590 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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APT34M60S/TRMOSFET N-CH 600V 36A D3PAK |
3,999 | - |
|
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POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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IXFT12N100QMOSFET N-CH 1000V 12A TO268 |
4,220 | - |
|
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HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFT17N80QMOSFET N-CH 800V 17A TO268 |
4,103 | - |
|
- |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 600mOhm @ 500mA, 10V | 4.5V @ 4mA | 95 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |