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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFR80N60P3MOSFET N-CH 600V 48A ISOPLUS247 |
4,140 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 76mOhm @ 40A, 10V | 5V @ 8mA | 190 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
APT5015BVRGMOSFET N-CH 500V 32A TO247 |
4,882 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT43F60LMOSFET N-CH 600V 45A TO264 |
3,987 |
|
Tabla de datos |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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IXFX24N100MOSFET N-CH 1000V 24A PLUS 247 |
3,291 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 Variant | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
MKH24I650HRDISCMSFT NCHSUPRJUNCCFD-CLS ISO2 |
2,494 |
|
Tabla de datos |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT31M100B2MOSFET N-CH 1000V 32A T-MAX |
3,600 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
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APT8065BVRGMOSFET N-CH 800V 13A TO247 |
2,515 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT1003RSFLLG/TRMOSFET N-CH 1KV 4A D3PAK |
2,779 |
|
Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | ±30V | 694 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
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APT5017BVFRGMOSFET N-CH 500V 30A TO247 |
4,347 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 170mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
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IXFH240N15X3MOSFET N-CH 150V 240A TO247 |
2,397 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 5.4mOhm @ 120A, 10V | 4.5V @ 4mA | 150 nC @ 10 V | ±20V | 9580 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
APT56F50LMOSFET N-CH 500V 56A TO264 |
2,946 |
|
Tabla de datos |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
|
UF4SC120023B7S1200V/23MO,SICFET,G4,TO263-7 |
2,541 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 12V | 30mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1430 pF @ 800 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
IXFK26N90MOSFET N-CH 900V 26A TO-264 |
4,866 |
|
Tabla de datos |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
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IXFK110N65X3DISCRETE MOSFET 110A 650V X3 TO2 |
2,706 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IXFX110N65X3DISCRETE MOSFET 110A 650V X3 PLU |
2,933 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GS66508T-MRGS66508T-MR |
4,548 |
|
- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 5.8 nC @ 6 V | +7V, -10V | 260 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
|
GS66508B-TRGS66508B-TR |
2,937 |
|
- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 6.1 nC @ 6 V | +7V, -10V | 242 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
|
GS66508T-TRGS66508T-TR |
2,042 |
|
- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 5.8 nC @ 6 V | +7V, -10V | 260 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
|
APT20M22B2VRGMOSFET N-CH 200V 100A T-MAX |
2,403 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
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IXFR24N100MOSFET N-CH 1KV 22A ISOPLUS247 |
3,890 |
|
Tabla de datos |
HiPerFET™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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