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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP50R380CEXKSA1MOSFET N-CH 500V 9.9A TO220-3 Infineon Technologies |
180 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPD90N04S403ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
9,811 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.2mOhm @ 90A, 10V | 4V @ 53µA | 66.8 nC @ 10 V | ±20V | 5260 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
|
|
IPD90N06S407ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
51,853 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 6.9mOhm @ 90A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | - | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
ISZ0702NLSATMA1MOSFET N-CH 60V 17A/86A TSDSON Infineon Technologies |
6,865 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 86A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.3V @ 26µA | 39 nC @ 10 V | ±20V | 2500 pF @ 30 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-25 |
|
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IPD60R400CEAUMA1MOSFET N-CH 600V 14.7A TO252 Infineon Technologies |
4,723 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14.7A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 112W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-2 |
|
|
IPP041N04NGXKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
399 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 45µA | 56 nC @ 10 V | ±20V | 4500 pF @ 20 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPC100N04S5L1R9ATMA1MOSFET N-CH 40V 100A 8TDSON-34 Infineon Technologies |
74,418 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 50µA | 81 nC @ 10 V | ±16V | 4310 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
|
BSC0502NSIATMA1MOSFET N-CH 30V 26A/100A TDSON Infineon Technologies |
23,737 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2V @ 250µA | 26 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
|
|
IPD023N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
1,667 |
|
Tabla de datos |
StrongIRFET™2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 143A (Tc) | 6V, 10V | 2.3mOhm @ 70A, 10V | 3.4V @ 81µA | 102 nC @ 10 V | ±20V | 4800 pF @ 20 V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IRFR48ZTRPBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
4,233 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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