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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISZ75DP15LMATMA1TRENCH >=100V Infineon Technologies |
3,935 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPC90N04S53R6ATMA1MOSFET N-CH 40V 90A 8TDSON-34 Infineon Technologies |
3,810 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 7V, 10V | 3.6mOhm @ 45A, 10V | 3.4V @ 23µA | 32.6 nC @ 10 V | ±20V | 1950 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
|
IPN80R1K4P7ATMA1MOSFET N-CH 800V 4A SOT223 Infineon Technologies |
243 |
|
Tabla de datos |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
|
|
IAUC100N04S6N028ATMA1IAUC100N04S6N028ATMA1 Infineon Technologies |
8,793 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 7V, 10V | 2.86mOhm @ 50A, 10V | 3V @ 24µA | 29 nC @ 10 V | ±20V | 1781 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8 |
|
IPD65R650CEAUMA1MOSFET N-CH 650V 7A TO252-3 Infineon Technologies |
553 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD900P06NMATMA1MOSFET P-CH 60V 16.4A TO252 Infineon Technologies |
8,408 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
IPD90N04S404ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
4,937 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4.1mOhm @ 90A, 10V | 4V @ 35µA | 43 nC @ 10 V | ±20V | 3440 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
|
ISC036N04NM5ATMA140V 3.6M OPTIMOS MOSFET SUPERSO8 Infineon Technologies |
3,418 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 21A (Ta), 98A (Tc) | 7V, 10V | 3.6mOhm @ 49A, 10V | 3.4V @ 23µA | 28 nC @ 10 V | ±20V | 2000 pF @ 20 V | - | 3W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IPA60R600P7SXKSA1MOSFET N-CH 600V 6A TO220 Infineon Technologies |
449 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPU95R3K7P7AKMA1MOSFET N-CH 950V 2A TO251-3 Infineon Technologies |
304 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 3.7Ohm @ 800mA, 10V | 3.5V @ 40µA | 6 nC @ 10 V | ±20V | 196 pF @ 400 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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