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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLHM620TRPBFMOSFET N-CH 20V 26A/40A PQFN Infineon Technologies |
10,726 |
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Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78 nC @ 4.5 V | ±12V | 3620 pF @ 10 V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (3x3) |
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BSC034N03LSGATMA1MOSFET N-CH 30V 22A/100A TDSON Infineon Technologies |
4,994 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 52 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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BSC030N03MSGATMA1MOSFET N-CH 30V 21A/100A TDSON Infineon Technologies |
10,567 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 73 nC @ 10 V | ±20V | 5700 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPN80R1K2P7ATMA1MOSFET N-CH 800V 4.5A SOT223 Infineon Technologies |
5,827 |
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Tabla de datos |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11 nC @ 10 V | ±20V | 300 pF @ 500 V | - | 6.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
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IRFU3910PBFMOSFET N-CH 100V 16A IPAK Infineon Technologies |
1,887 |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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ISZ24DP10LMATMA1TRENCH >=100V Infineon Technologies |
3,786 |
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Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8-25 |
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IPD60R600P7ATMA1MOSFET N-CH 600V 6A TO252-3 Infineon Technologies |
2,196 |
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Tabla de datos |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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ISZ0703NLSATMA1MOSFET N-CH 60V 13A/56A TSDSON Infineon Technologies |
17,201 |
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Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 2.3V @ 15µA | 23 nC @ 10 V | ±20V | 1400 pF @ 30 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-25 |
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IPD60R950C6ATMA1MOSFET N-CH 600V 4.4A TO252-3 Infineon Technologies |
6,743 |
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Tabla de datos |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD130N10NF2SATMA1MOSFET Infineon Technologies |
1,934 |
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Tabla de datos |
StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 52A (Tc) | 6V, 10V | 13mOhm @ 30A, 10V | 3.8V @ 30µA | 28 nC @ 10 V | ±20V | 1300 pF @ 50 V | - | 3W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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