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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLR3105TRPBFMOSFET N-CH 55V 25A DPAK Infineon Technologies |
18,605 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±16V | 710 pF @ 25 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSZ033NE2LS5ATMA1MOSFET N-CH 25V 18A/40A TSDSON Infineon Technologies |
5,000 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2V @ 250µA | 18.3 nC @ 10 V | ±16V | 1230 pF @ 12 V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
|
|
IRFR9120NTRLPBFMOSFET P-CH 100V 6.6A DPAK Infineon Technologies |
7,277 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IPD25CN10NGATMA1MOSFET N-CH 100V 35A TO252-3 Infineon Technologies |
3,796 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31 nC @ 10 V | ±20V | 2070 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IAUZ40N06S5N050ATMA1MOSFET N-CH 60V 40A TSDSON-8-33 Infineon Technologies |
4,419 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tj) | - | 5mOhm @ 20A, 10V | 3.4V @ 29µA | 30.5 nC @ 10 V | ±20V | 2200 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-33 |
|
IPA60R650CEXKSA1MOSFET N-CH 600V 7A TO220-FP Infineon Technologies |
500 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRFH5301TRPBFMOSFET N-CH 30V 35A/100A PQFN Infineon Technologies |
9,076 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.85mOhm @ 50A, 10V | 2.35V @ 100µA | 77 nC @ 10 V | ±20V | 5114 pF @ 15 V | - | 3.6W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
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IPN80R900P7ATMA1MOSFET N-CHANNEL 800V 6A SOT223 Infineon Technologies |
5,077 |
|
Tabla de datos |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
|
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IPD19DP10NMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
2,847 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.6A (Ta), 13.7A (Tc) | 10V | 186mOhm @ 12A, 10V | 4V @ 1.04mA | 45 nC @ 10 V | ±20V | 2000 pF @ 50 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
BSC026NE2LS5ATMA1MOSFET N-CH 25V 24A/82A TDSON Infineon Technologies |
1,559 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 82A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 16 nC @ 10 V | ±16V | 1100 pF @ 12 V | - | 2.5W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
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