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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IAUMN10S5N016GAUMA1MOSFET_(75V 120V( Infineon Technologies |
1,965 |
|
Tabla de datos |
OptiMOS™ 5 | 4-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 220A (Tj) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.8V @ 230µA | 190 nC @ 10 V | ±20V | 13570 pF @ 50 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-4-1 |
|
IAUA210N10S5N024AUMA1MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies |
3,600 |
|
Tabla de datos |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tj) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 150µA | 119 nC @ 10 V | ±20V | 8696 pF @ 50 V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
|
IPP039N10N5AKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
500 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3.9mOhm @ 50A, 10V | 3.8V @ 125µA | 95 nC @ 10 V | ±20V | 7000 pF @ 50 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
AUIRF7736M2TRMOSFET N-CH 40V 22A DIRECTFET Infineon Technologies |
3,844 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric M4 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 108A (Tc) | 10V | 3mOhm @ 65A, 10V | 4V @ 150µA | 108 nC @ 10 V | ±20V | 4267 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M4 |
|
IPA90R500C3XKSA2MOSFET N-CH 900V 11A TO220 Infineon Technologies |
1,915 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
IPP020N06NAKSA1MOSFET N-CH 60V 29A/120A TO220-3 Infineon Technologies |
662 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Ta), 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 2.8V @ 143µA | 106 nC @ 10 V | ±20V | 7800 pF @ 30 V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
GS-065-004-6-L-MRGS-065-004-6-L-MR Infineon Technologies Canada Inc. |
357 |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 4.6A (Tc) | 6V | 455mOhm @ 1.2A, 6V | 2.6V @ 1mA | 0.8 nC @ 6 V | +7V, -10V | 26 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
|
IPDQ65R099CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
750 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4.5V @ 480µA | 39 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 186W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
SPI21N50C3XKSA1MOSFET N-CH 560V 21A TO262-3 Infineon Technologies |
940 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
IPA65R150CFDXKSA2MOSFET N-CH 650V 22.4A TO220 Infineon Technologies |
494 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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