制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFH7182TRPBFMOSFET N-CH 100V 23A/157A 8PQFN Infineon Technologies |
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FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Ta), 157A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 250µA | 74 nC @ 10 V | ±20V | 3120 pF @ 50 V | - | 4W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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AUIRFP4310ZMOSFET N-CH 100V 128A TO247AC Infineon Technologies |
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HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 128A (Tc) | 10V | 6mOhm @ 77A, 10V | 4V @ 150µA | 188 nC @ 10 V | ±20V | 7120 pF @ 50 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
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AUIRFS4127MOSFET N-CH 200V 72A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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AUIRFSA8409-7PMOSFET N-CH 40V 523A D2PAK Infineon Technologies |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 523A (Tc) | 10V | 0.69mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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AUIRLS8409-7PMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 4.5V, 10V | 0.75mOhm @ 100A, 10V | 2.4V @ 250µA | 266 nC @ 4.5 V | ±16V | 16488 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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AUIRLU3114ZMOSFET N-CH 40V 130A TO251-3 Infineon Technologies |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
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62-0095PBFMOSFET N-CH 20V 10A/12A 8SOIC Infineon Technologies |
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- | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta), 12A (Tc) | 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11 nC @ 4.5 V | - | 900 pF @ 10 V | - | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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62-0136PBFMOSFET N-CH 30V 19A 8-SOIC Infineon Technologies |
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- | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta) | 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44 nC @ 4.5 V | ±20V | 3710 pF @ 15 V | - | 2.5W | -55°C ~ 150°C (TA) | - | - | Surface Mount | - |
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62-0218PBFMOSFET P-CH 30V 9.2A 8-SO Infineon Technologies |
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* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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62-0258PBFMOSFET P-CH 30V 9.2A 8-SO Infineon Technologies |
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* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |