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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI80P04P4L04AKSA1MOSFET P-CH 40V 80A TO262-3 Infineon Technologies |
4,764 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | +5V, -16V | 3800 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
|
IPL65R165CFDAUMA1MOSFET N-CH 650V 21.3A 4VSON Infineon Technologies |
4,300 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 21.3A (Tc) | 10V | 165mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R190E6AUMA1MOSFET N-CH 650V 20.2A 4VSON Infineon Technologies |
2,207 |
|
Tabla de datos |
CoolMOS™ E6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 700µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R210CFDAUMA1MOSFET N-CH 650V 16.6A 4VSON Infineon Technologies |
2,136 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 16.6A (Tc) | 10V | 210mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R310E6AUMA1MOSFET N-CH 650V 13.1A THIN-PAK Infineon Technologies |
2,058 |
|
Tabla de datos |
CoolMOS™ E6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.1A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 3.5V @ 400µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R340CFDAUMA1MOSFET N-CH 650V 10.9A THIN-PAK Infineon Technologies |
4,886 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R420E6AUMA1MOSFET N-CH 650V 10.1A THIN-PAK Infineon Technologies |
4,251 |
|
Tabla de datos |
CoolMOS™ E6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.1A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 3.5V @ 300µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R460CFDAUMA1MOSFET N-CH 650V 8.3A THIN-PAK Infineon Technologies |
4,597 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.3A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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IPL65R660E6AUMA1MOSFET N-CH 650V 7A THIN-PAK Infineon Technologies |
2,231 |
|
Tabla de datos |
CoolMOS™ E6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 3.5V @ 200µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IPP120P04P404AKSA1MOSFET P-CH 40V 120A TO220-3 Infineon Technologies |
4,367 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 340µA | 205 nC @ 10 V | ±20V | 14790 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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