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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSL802SNH6327XTSA1MOSFET N-CH 20V 7.5A TSOP-6 Infineon Technologies |
3,247 |
|
Tabla de datos |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.5A (Ta) | 1.8V, 2.5V | 22mOhm @ 7.5A, 2.5V | 750mV @ 30µA | 4.7 nC @ 2.5 V | ±8V | 1347 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
|
BSR606NH6327XTSA1MOSFET N-CH 60V 2.3A SC59 Infineon Technologies |
4,011 |
|
Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.3A (Ta) | 4.5V, 10V | 60mOhm @ 2.3A, 10V | 2.3V @ 15µA | 5.6 nC @ 5 V | ±20V | 657 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SC59-3 |
|
BSS119NH6433XTMA1MOSFET N-CH 100V 190MA SOT23-3 Infineon Technologies |
2,312 |
|
Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3 |
|
BSS192PH6327XTSA1MOSFET P-CH 250V 190MA SOT89 Infineon Technologies |
3,528 |
|
Tabla de datos |
SIPMOS™ | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
|
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BSS225H6327XTSA1MOSFET N-CH 600V 90MA SOT89 Infineon Technologies |
2,704 |
|
Tabla de datos |
SIPMOS™ | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90mA (Ta) | 4.5V, 10V | 45Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8 nC @ 10 V | ±20V | 131 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
|
IPB065N10N3GATMA1MOSFET N-CH 100V 80A D2PAK Infineon Technologies |
3,935 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 6.5mOhm @ 80A, 10V | 3.5V @ 90µA | 64 nC @ 10 V | ±20V | 4910 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IPB120N04S404ATMA1MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
3,565 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.6mOhm @ 100A, 10V | 4V @ 40µA | 55 nC @ 10 V | ±20V | 4100 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
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IPB120P04P404ATMA1MOSFET P-CH 40V 120A D2PAK Infineon Technologies |
4,017 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 340µA | 205 nC @ 10 V | ±20V | 14790 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
IPB140N08S404ATMA1MOSFET N-CH 80V 140A TO263-7 Infineon Technologies |
4,392 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 140A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 100µA | 80 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 161W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
|
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IPB160N08S403ATMA1MOSFET N-CH 80V 160A TO263-7 Infineon Technologies |
4,907 |
|
Tabla de datos |
OptiMOS™ T2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 160A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 150µA | 112 nC @ 10 V | ±20V | 7750 pF @ 25 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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