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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP60R380P6XKSA1MOSFET N-CH 600V 10.6A TO220-3 Infineon Technologies |
4,598 |
|
Tabla de datos |
CoolMOS™ P6 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPW60R230P6FKSA1MOSFET N-CH 600V 16.8A TO247-3 Infineon Technologies |
4,048 |
|
Tabla de datos |
CoolMOS™ P6 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
|
IPW60R330P6FKSA1MOSFET N-CH 600V 12A TO247-3 Infineon Technologies |
4,445 |
|
Tabla de datos |
CoolMOS™ P6 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22 nC @ 10 V | ±20V | 1010 pF @ 100 V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
IPB120P04P4L03ATMA1MOSFET P-CH 40V 120A D2PAK Infineon Technologies |
2,078 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | ±16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPD50P04P413ATMA1MOSFET P-CH 40V 50A TO252-3 Infineon Technologies |
4,060 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 12.6mOhm @ 50A, 10V | 4V @ 85µA | 51 nC @ 10 V | ±20V | 3670 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
IPD60R380P6BTMA1MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies |
3,062 |
|
Tabla de datos |
CoolMOS™ P6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRF7780MTRPBFMOSFET N-CH 75V 89A DIRECTFET Infineon Technologies |
3,462 |
|
Tabla de datos |
StrongIRFET™ | DirectFET™ Isometric ME | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 89A (Tc) | 6V, 10V | 5.7mOhm @ 53A, 10V | 3.7V @ 150µA | 186 nC @ 10 V | ±20V | 6504 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
|
IRL40B209MOSFET N-CH 40V 195A TO220AB Infineon Technologies |
4,298 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.25mOhm @ 100A, 10V | 2.4V @ 250µA | 270 nC @ 4.5 V | ±20V | 15140 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRL40B212MOSFET N-CH 40V 195A TO220AB Infineon Technologies |
3,102 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137 nC @ 4.5 V | ±20V | 8320 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRL40S212MOSFET N-CH 40V 195A D2PAK Infineon Technologies |
3,617 |
|
Tabla de datos |
StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137 nC @ 4.5 V | ±20V | 8320 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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