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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI030N10N3GXKSA1MOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
3,636 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPI037N08N3GXKSA1MOSFET N-CH 80V 100A TO262-3 Infineon Technologies |
4,842 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
BSL303SPEH6327XTSA1MOSFET P-CH 30V 6.3A TSOP-6 Infineon Technologies |
4,947 |
|
Tabla de datos |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 4.5V, 10V | 33mOhm @ 6.3A, 10V | 2V @ 30µA | 20.9 nC @ 10 V | ±20V | 1401 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
|
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BSL305SPEH6327XTSA1MOSFET P-CH 30V 5.3A TSOP-6 Infineon Technologies |
4,826 |
|
Tabla de datos |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.3A (Ta) | 4.5V, 10V | 45mOhm @ 5.3A, 10V | 2V @ 20µA | 14 nC @ 10 V | ±20V | 939 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
|
IPAW60R190CEXKSA1MOSFET N-CH 600V 26.7A TO220 Infineon Technologies |
4,291 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 26.7A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPD60R650CEBTMA1MOSFET N-CH 600V 7A TO252-3 Infineon Technologies |
4,978 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 82W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IPD70R2K0CEAUMA1MOSFET N-CH 700V 4A TO252-3 Infineon Technologies |
4,014 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8 nC @ 10 V | ±20V | 163 pF @ 100 V | - | 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IPD70R600CEAUMA1MOSFET N-CH 700V 10.5A TO252-3 Infineon Technologies |
3,136 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPS70R600CEAKMA1MOSFET N-CH 700V 10.5A TO251-3 Infineon Technologies |
4,640 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPU50R2K0CEAKMA1MOSFET N-CH 500V 2.4A TO251-3 Infineon Technologies |
2,788 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6 nC @ 10 V | ±20V | 124 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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