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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRFBA1405MOSFET N-CH 55V 95A SUPER-220 Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
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AUIRF7805QMOSFET N-CH 30V 13A 8SO Infineon Technologies |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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AUIRFU540ZMOSFET N-CH 100V 35A IPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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AUIRF7484QTRMOSFET N CH 40V 14A 8-SO Infineon Technologies |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100 nC @ 7 V | ±8V | 3520 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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AUIRF7484QMOSFET N CH 40V 14A 8-SO Infineon Technologies |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100 nC @ 7 V | ±8V | 3520 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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AUIRF6215SMOSFET P-CH 150V 13A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF6218SMOSFET P-CH 150V 27A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRLR024ZMOSFET N CH 55V 16A DPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRLL024ZMOSFET N-CH 55V 5A SOT223 Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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AUIRLU024ZMOSFET N-CH 55V 16A IPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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