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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRFS8408MOSFET N-CH 40V 195A D2PAK Infineon Technologies |
3,213 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
AUIRFS8408-7PMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
4,564 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-900 |
|
AUIRFS8409MOSFET N-CH 40V 195A D2PAK Infineon Technologies |
2,181 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
AUIRFR8401MOSFET N-CH 40V 100A DPAK Infineon Technologies |
4,215 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 50µA | 63 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
AUIRFU8405MOSFET N-CH 40V 100A IPAK Infineon Technologies |
3,530 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155 nC @ 10 V | ±20V | 5171 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
AUIRFU8401MOSFET N-CH 40V 100A IPAK Infineon Technologies |
3,003 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 500µA | 63 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRFH4213TRPBFMOSFET N-CH 25V 41A PQFN Infineon Technologies |
3,507 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 41A (Ta) | 4.5V, 10V | 1.35mOhm @ 50A, 10V | 2.1V @ 100µA | 54 nC @ 10 V | ±20V | 3420 pF @ 13 V | - | 3.6W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IRFHM4226TRPBFMOSFET N CH 25V 28A PQFN Infineon Technologies |
2,389 |
|
Tabla de datos |
HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.1V @ 50µA | 32 nC @ 10 V | ±20V | 2000 pF @ 13 V | - | 2.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
|
IPD60R600P6MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
4,407 |
|
Tabla de datos |
CoolMOS™ P6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | - | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPA65R099C6XKSA1MOSFET N-CH 650V 38A TO220 Infineon Technologies |
3,853 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
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