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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRLS3036-7PMOSFET N-CH 60V 240A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 4.5V, 10V | 1.9mOhm @ 180A, 10V | 2.5V @ 250µA | 160 nC @ 4.5 V | ±16V | 11270 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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AUIRLS4030MOSFET N-CH 100V 180A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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AUIRLS4030-7PMOSFET N-CH 100V 190A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11490 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK (7-Lead) |
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AUIRLU2905MOSFET N-CH 55V 42A IPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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AUIRLU3110ZMOSFET N-CH 100V 42A IPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | - | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | - | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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AUIRLZ44ZLMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
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Tabla de datos |
- | TO-220-3 | Tube | Obsolete | - | - | - | 51A (Tc) | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF3710ZGPBFMOSFET N-CH 100V 59A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250mA | 120 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF4104GPBFMOSFET N CH 40V 75A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPW50R280CEFKSA1MOSFET N-CH 500V 13A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPD50R950CEBTMA1MOSFET N-CH 500V 4.3A TO252-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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