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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD50R280CEBTMA1MOSFET N-CH 500V 13A TO252-3 Infineon Technologies |
2,725 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPP50R500CEXKSA1MOSFET N-CH 500V 7.6A TO220-3 Infineon Technologies |
2,262 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | - | - | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPD50R500CEBTMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
4,137 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPI020N06NAKSA1MOSFET N-CH 60V 29A/120A TO262 Infineon Technologies |
4,566 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Ta), 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 2.8V @ 143µA | 106 nC @ 10 V | ±20V | 7800 pF @ 30 V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
IPD50R380CEBTMA1MOSFET N-CH 500V 14.1A TO252-3 Infineon Technologies |
2,654 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 14.1A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPA50R190CEMOSFET N-CH 500V 18.5A TO220-FP Infineon Technologies |
3,575 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | ±20V | 1137 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPW50R190CEFKSA1MOSFET N-CH 500V 18.5A TO247-3 Infineon Technologies |
4,912 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | ±20V | 1137 pF @ 100 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
|
IPD50R800CEBTMA1MOSFET N CH 500V 5A TO252 Infineon Technologies |
2,835 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD50R650CEBTMA1MOSFET N-CH 500V 6.1A TO252-3 Infineon Technologies |
3,439 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15 nC @ 10 V | ±20V | 342 pF @ 100 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRFS7437-7PPBFMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
3,691 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7437 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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