制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRFR3410TRRPBFMOSFET N-CH 100V 31A DPAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
![]() |
IRFS4010TRRPBFMOSFET N-CH 100V 180A D2PAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±20V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IRLR8726PBFMOSFET N-CH 30V 86A DPAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23 nC @ 4.5 V | ±20V | 2150 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
![]() |
IRLR8729PBFMOSFET N-CH 30V 58A D-PAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16 nC @ 4.5 V | ±20V | 1350 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
![]() |
IRLR8729TRLPBFMOSFET N-CH 30V 58A D-PAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16 nC @ 4.5 V | ±20V | 1350 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
![]() |
IRLS3036TRRPBFMOSFET N-CH 60V 195A D2PAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IRLU8256PBFMOSFET N-CH 25V 81A IPAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15 nC @ 4.5 V | ±20V | 1470 pF @ 13 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
![]() |
IRLU8259PBFMOSFET N-CH 25V 57A IPAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10 nC @ 4.5 V | ±20V | 900 pF @ 13 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
![]() |
IRFHM830DTRPBFMOSFET N-CH 30V 20A/40A PQFN Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.35V @ 50µA | 27 nC @ 10 V | ±20V | 1797 pF @ 25 V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (3x3) |
![]() |
IPA60R450E6XKSA1MOSFET N-CH 600V 9.2A TO220-FP Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |