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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFB4310ZGPBFMOSFET N-CH 100V 120A TO220AB Infineon Technologies |
4,293 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFS4228TRLPBFMOSFET N-CH 150V 83A D2PAK Infineon Technologies |
3,040 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107 nC @ 10 V | ±30V | 4530 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFSL4229PBFMOSFET N-CH 250V 45A TO262 Infineon Technologies |
3,323 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 45A (Tc) | 10V | 48mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4560 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRLB3036GPBFMOSFET N-CH 60V 195A TO220AB Infineon Technologies |
2,495 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRLR024ZTRPBFMOSFET N-CH 55V 16A DPAK Infineon Technologies |
3,508 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRLU8726PBFMOSFET N-CH 30V 86A IPAK Infineon Technologies |
2,053 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23 nC @ 4.5 V | ±20V | 2150 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRLU8729-701PBFMOSFET N-CH 30V 58A IPAK Infineon Technologies |
3,745 |
|
Tabla de datos |
HEXFET® | TO-252-4, DPAK (3 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16 nC @ 4.5 V | ±20V | 1350 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | I-PAK (LF701) |
|
IRF6201PBFMOSFET N-CH 20V 27A 8SO Infineon Technologies |
3,574 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 20 V | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | 1.1V @ 100µA | 195 nC @ 4.5 V | ±12V | 8555 pF @ 16 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF9317PBFMOSFET P-CH 30V 16A 8SO Infineon Technologies |
2,186 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 16A, 10V | 2.4V @ 50µA | 92 nC @ 10 V | ±20V | 2820 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF9321PBFMOSFET P-CH 30V 15A 8SO Infineon Technologies |
4,210 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | 2.4V @ 50µA | 98 nC @ 10 V | ±20V | 2590 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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