制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRF1324S-7PMOSFET N-CH 24V 240A D2PAK Infineon Technologies |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 240A (Tc) | - | 1mOhm @ 160A, 10V | 4V @ 250µA | 252 nC @ 10 V | - | 7700 pF @ 19 V | - | - | - | - | - | Surface Mount | D2PAK (7-Lead) |
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AUIRF1324STRLMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF1404ZLMOSFET N-CH 40V 160A TO262 Infineon Technologies |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRF1404ZSMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF1405ZSMOSFET N-CH 55V 150A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF2804MOSFET N-CH 40V 195A TO220 Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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AUIRF2804SMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF2804S-7PMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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AUIRF2907ZMOSFET N-CH 75V 75A TO220AB Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF2907ZS7PTLMOSFET N-CH 75V 180A D2PAK Infineon Technologies |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 180A (Tc) | 10V | 3.8mOhm @ 110A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7580 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |