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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6633ATRPBFMOSFET N-CH 20V 16A DIRECTFET Infineon Technologies |
3,249 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MU | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta), 69A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17 nC @ 4.5 V | ±20V | 1410 pF @ 10 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MU |
|
IRF6711STRPBFMOSFET N-CH 25V 19A DIRECTFET Infineon Technologies |
2,178 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 84A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.35V @ 25µA | 20 nC @ 4.5 V | ±20V | 1810 pF @ 13 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
|
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IRF6713STRPBFMOSFET N-CH 25V 22A DIRECTFET Infineon Technologies |
2,145 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 22A (Ta), 95A (Tc) | 4.5V, 10V | 3mOhm @ 22A, 10V | 2.4V @ 50µA | 32 nC @ 4.5 V | ±20V | 2880 pF @ 13 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
|
IRF6797MTRPBFMOSFET N-CH 25V 36A DIRECTFET Infineon Technologies |
2,191 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 36A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 38A, 10V | 2.35V @ 150µA | 68 nC @ 4.5 V | ±20V | 5790 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6798MTRPBFMOSFET N-CH 25V 37A DIRECTFET Infineon Technologies |
2,520 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 37A (Ta), 197A (Tc) | 4.5V, 10V | 1.3mOhm @ 37A, 10V | 2.35V @ 150µA | 75 nC @ 4.5 V | ±20V | 6560 pF @ 13 V | Schottky Diode (Body) | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
62-0203PBFMOSFET P-CH 12V 16A 8SO Infineon Technologies |
4,029 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91 nC @ 4.5 V | ±8V | 8676 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF8113GPBFMOSFET N-CH 30V 17.2A 8SO Infineon Technologies |
4,583 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF8252PBFMOSFET N-CH 25V 25A 8SO Infineon Technologies |
2,828 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 25A (Ta) | 4.5V, 10V | 2.7mOhm @ 25A, 10V | 2.35V @ 100µA | 53 nC @ 4.5 V | ±20V | 5305 pF @ 13 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF8788PBFMOSFET N-CH 30V 24A 8SO Infineon Technologies |
4,391 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 2.35V @ 100µA | 66 nC @ 4.5 V | ±20V | 5720 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFR1018ETRRPBFMOSFET N-CH 60V 56A DPAK Infineon Technologies |
2,468 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69 nC @ 10 V | ±20V | 2290 pF @ 50 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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