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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI80P03P4L04AKSA1MOSFET P-CH 30V 80A TO262-3 Infineon Technologies |
3,620 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPI80P03P4L07AKSA1MOSFET P-CH 30V 80A TO262-3 Infineon Technologies |
4,543 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPP065N04N GMOSFET N-CH 40V 50A TO220-3 Infineon Technologies |
3,855 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 6.5mOhm @ 50A, 10V | 4V @ 200µA | 34 nC @ 10 V | ±20V | 2800 pF @ 20 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP120N06S4H1AKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
3,645 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270 nC @ 10 V | ±20V | 21900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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IPP80N04S3H4AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
4,659 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 4V @ 65µA | 60 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80N06S405AKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
4,359 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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IPP80N06S407AKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
2,820 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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IPP80P03P4L04AKSA1MOSFET P-CH 30V 80A TO220-3 Infineon Technologies |
2,022 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80P03P4L07AKSA1MOSFET P-CH 30V 80A TO220-3 Infineon Technologies |
2,652 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP90N06S4L04AKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
2,194 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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