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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPW50R199CPFKSA1MOSFET N-CH 550V 17A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW50R299CPFKSA1MOSFET N-CH 550V 12A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW50R350CPFKSA1MOSFET N-CH 550V 10A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW60R250CPMOSFET N-CH 650V 12A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35 nC @ 10 V | ±20V | 1200 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW90R1K0C3FKSA1MOSFET N-CH 900V 5.7A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34 nC @ 10 V | ±20V | 850 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW90R1K2C3FKSA1MOSFET N-CH 900V 5.1A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW90R340C3FKSA1MOSFET N-CH 900V 15A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW90R500C3FKSA1MOSFET N-CH 900V 11A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPW90R800C3FKSA1MOSFET N-CH 900V 6.9A TO247-3 Infineon Technologies |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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SN7002W L6327MOSFET N-CH 60V 230MA SOT323-3 Infineon Technologies |
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Tabla de datos |
SIPMOS® | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT323 |
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