制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPI90R800C3XKSA1MOSFET N-CH 900V 6.9A TO262-3 Infineon Technologies |
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CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP06CN10LGXKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 6.2mOhm @ 100A, 10V | 2.4V @ 180µA | 124 nC @ 10 V | ±20V | 11900 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP070N08N3 GMOSFET N-CH 80V 80A TO220-3 Infineon Technologies |
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OptiMOS™ 3 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP093N06N3GXKSA1MOSFET N-CH 60V 50A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | 4V @ 34µA | 36 nC @ 10 V | ±20V | 2900 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP100N04S204AKSA1MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP100N06S2L05AKSA1MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP139N08N3 GMOSFET N-CH 80V 45A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A (Tc) | 6V, 10V | 13.9mOhm @ 45A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP22N03S4L15AKSA1MOSFET N-CH 30V 22A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Tc) | 4.5V, 10V | 14.9mOhm @ 22A, 10V | 2.2V @ 10µA | 14 nC @ 10 V | ±16V | 980 pF @ 25 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP230N06L3 GMOSFET N-CH 60V 30A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 10 nC @ 4.5 V | ±20V | 1600 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP260N06N3GXKSA1MOSFET N-CH 60V 27A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Tc) | 10V | 26mOhm @ 27A, 10V | 4V @ 11µA | 15 nC @ 10 V | ±20V | 1200 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |