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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BTS282ZAKSA1MOSFET N-CH 49V 80A TO220-7 Infineon Technologies |
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Tabla de datos |
TEMPFET® | TO-220-7 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | P-TO220-7-3 |
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BUZ31L E3044AMOSFET N-CH 200V 13.5A TO220-3 Infineon Technologies |
0 |
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Tabla de datos |
SIPMOS® | TO-220-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BUZ32H3045AATMA1MOSFET N-CH 200V 9.5A TO263-3 Infineon Technologies |
0 |
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Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB03N03LAMOSFET N-CH 25V 80A TO263-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 55A, 10V | 2V @ 100µA | 57 nC @ 5 V | ±20V | 7027 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB03N03LBMOSFET N-CH 30V 80A D2PAK Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 55A, 10V | 2V @ 100µA | 59 nC @ 5 V | ±20V | 7624 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB04N03LBMOSFET N-CH 30V 80A D2PAK Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.5mOhm @ 55A, 10V | 2V @ 70µA | 40 nC @ 5 V | ±20V | 5203 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB06N03LA GMOSFET N-CH 25V 50A TO263-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB06N03LB GMOSFET N-CH 30V 50A D2PAK Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.3mOhm @ 50A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2782 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB070N06N GMOSFET N-CHAN D2PAK Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 6.7mOhm @ 80A, 10V | 4V @ 180µA | 126 nC @ 10 V | - | 4300 pF @ 30 V | - | - | - | - | - | Surface Mount | PG-TO263-3 |
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IPB091N06N GMOSFET N-CHAN D2PAK Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 8.8mOhm @ 80A, 10V | 4V @ 130µA | 81 nC @ 10 V | - | 2800 pF @ 30 V | - | - | - | - | - | Surface Mount | PG-TO263-3 |
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