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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7467PBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
4,059 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32 nC @ 4.5 V | ±12V | 2530 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7490PBFMOSFET N-CH 100V 5.4A 8SO Infineon Technologies |
4,653 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.4A (Ta) | 10V | 39mOhm @ 3.2A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7420PBFMOSFET P-CH 12V 11.5A 8SO Infineon Technologies |
3,084 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 12 V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38 nC @ 4.5 V | ±8V | 3529 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7464PBFMOSFET N-CH 200V 1.2A 8SO Infineon Technologies |
2,462 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7807APBFMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,060 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFB4610MOSFET N-CH 100V 73A TO220AB Infineon Technologies |
4,914 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
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IRF7413PBFMOSFET N-CH 30V 13A 8SO Infineon Technologies |
4,389 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7205PBFMOSFET P-CH 30V 4.6A 8SO Infineon Technologies |
2,202 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 4.5V, 10V | 70mOhm @ 4.6A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 870 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRL3716LPBFMOSFET N-CH 20V 180A TO262 Infineon Technologies |
4,845 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
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IRF7424PBFMOSFET P-CH 30V 11A 8SO Infineon Technologies |
3,617 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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