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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7410PBFMOSFET P-CH 12V 16A 8SO Infineon Technologies |
4,363 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91 nC @ 4.5 V | ±8V | 8676 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF7807ZPBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
3,034 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11 nC @ 4.5 V | ±20V | 770 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFB4212PBFMOSFET N-CH 100V 18A TO220AB Infineon Technologies |
2,722 |
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Tabla de datos |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 72.5mOhm @ 13A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±20V | 550 pF @ 50 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF2907ZS-7PPBFMOSFET N-CH 75V 160A D2PAK Infineon Technologies |
4,017 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 160A (Tc) | 10V | 3.8mOhm @ 110A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7580 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRF7416PBFMOSFET P-CH 30V 10A 8SO Infineon Technologies |
3,920 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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62-0063PBFMOSFET N-CH 12V 15A 8SO Infineon Technologies |
2,548 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 15A (Ta) | 2.8V, 4.5V | 8mOhm @ 15A, 4.5V | 1.9V @ 250µA | 40 nC @ 4.5 V | ±12V | 2550 pF @ 6 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFS52N15DPBFMOSFET N-CH 150V 51A D2PAK Infineon Technologies |
4,982 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89 nC @ 10 V | ±30V | 2770 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF1902PBFMOSFET N-CH 20V 4.2A 8SO Infineon Technologies |
2,369 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.7V, 4.5V | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5 nC @ 4.5 V | ±12V | 310 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFU3707ZPBFMOSFET N-CH 30V 56A IPAK Infineon Technologies |
3,057 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14 nC @ 4.5 V | ±20V | 1150 pF @ 15 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFU3704ZPBFMOSFET N-CH 20V 60A IPAK Infineon Technologies |
3,178 |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 8.4mOhm @ 15A, 10V | 2.55V @ 250µA | 14 nC @ 4.5 V | ±20V | 1190 pF @ 10 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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