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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7204PBFMOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
4,802 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±12V | 860 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF9410PBFMOSFET N-CH 30V 7A 8SO Infineon Technologies |
4,343 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7403PBFMOSFET N-CH 30V 8.5A 8SO Infineon Technologies |
2,306 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7488PBFMOSFET N-CH 80V 6.3A 8SO Infineon Technologies |
2,507 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.3A (Ta) | 10V | 29mOhm @ 3.8A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 2.5W (Ta) | - | - | - | Surface Mount | 8-SO |
|
|
IRF7353D2PBFMOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
3,617 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7466PBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
2,560 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23 nC @ 4.5 V | ±20V | 2100 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7452PBFMOSFET N-CH 100V 4.5A 8SO Infineon Technologies |
2,953 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 930 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7807VD2PBFMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
2,083 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
SI4420DYPBFMOSFET N-CH 30V 12.5A 8SO Infineon Technologies |
2,560 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78 nC @ 10 V | ±20V | 2240 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7475PBFMOSFET N-CH 12V 11A 8SO Infineon Technologies |
4,548 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19 nC @ 4.5 V | ±12V | 1590 pF @ 6 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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