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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFPS3810PBFMOSFET N-CH 100V 170A SUPER247 Infineon Technologies |
4,293 |
|
Tabla de datos |
HEXFET® | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390 nC @ 10 V | ±30V | 6790 pF @ 25 V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
IRF1312PBFMOSFET N-CH 80V 95A TO220AB Infineon Technologies |
3,660 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 95A (Tc) | 10V | 10mOhm @ 57A, 10V | 5.5V @ 250µA | 140 nC @ 10 V | ±20V | 5450 pF @ 25 V | - | 3.8W (Ta), 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRL3716PBFMOSFET N-CH 20V 180A TO220AB Infineon Technologies |
3,421 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFPS3815PBFMOSFET N-CH 150V 105A SUPER247 Infineon Technologies |
4,126 |
|
Tabla de datos |
HEXFET® | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 15mOhm @ 63A, 10V | 5V @ 250µA | 390 nC @ 10 V | ±30V | 6810 pF @ 25 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
IRFBA1405PPBFMOSFET N-CH 55V 174A SUPER-220 Infineon Technologies |
2,366 |
|
Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 174A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
|
IRFBA1404PPBFMOSFET N-CH 40V 206A SUPER-220 Infineon Technologies |
3,452 |
|
Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
|
IRF7831PBFMOSFET N-CH 30V 21A 8SO Infineon Technologies |
2,160 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2.35V @ 250µA | 60 nC @ 4.5 V | ±12V | 6240 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7201PBFMOSFET N-CH 30V 7.3A 8SO Infineon Technologies |
4,449 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7458PBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
4,761 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 10V, 16V | 8mOhm @ 14A, 16V | 4V @ 250µA | 59 nC @ 10 V | ±30V | 2410 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7455PBFMOSFET N-CH 30V 15A 8SO Infineon Technologies |
2,459 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56 nC @ 5 V | ±12V | 3480 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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