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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFIZ24EPBFMOSFET N-CH 60V 14A TO220AB FP Infineon Technologies |
3,664 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 71mOhm @ 7.8A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 370 pF @ 25 V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
IRL2703SPBFMOSFET N-CH 30V 24A D2PAK Infineon Technologies |
2,382 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 40mOhm @ 14A, 10V | 1V @ 250µA | 15 nC @ 4.5 V | ±16V | 450 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFR15N20DPBFMOSFET N-CH 200V 17A DPAK Infineon Technologies |
4,923 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 17A (Tc) | 10V | 165mOhm @ 10A, 10V | 5.5V @ 250µA | 41 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 3W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRFL4105PBFMOSFET N-CH 55V 3.7A SOT223 Infineon Technologies |
3,466 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.7A (Ta) | 10V | 45mOhm @ 3.7A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRLU3915PBFMOSFET N-CH 55V 30A IPAK Infineon Technologies |
3,563 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92 nC @ 10 V | ±16V | 1870 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
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IRFS59N10DPBFMOSFET N-CH 100V 59A D2PAK Infineon Technologies |
2,415 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRL520NSPBFMOSFET N-CH 100V 10A D2PAK Infineon Technologies |
2,388 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRL3202PBFMOSFET N-CH 20V 48A TO220AB Infineon Technologies |
2,696 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 48A (Tc) | 4.5V, 7V | 16mOhm @ 29A, 7V | 700mV @ 250µA (Min) | 43 nC @ 4.5 V | ±10V | 2000 pF @ 15 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRL3714SPBFMOSFET N-CH 20V 36A D2PAK Infineon Technologies |
4,318 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7 nC @ 4.5 V | ±20V | 670 pF @ 10 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRLZ44ZSPBFMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
2,496 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36 nC @ 5 V | ±16V | 1620 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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