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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFU1205PBFMOSFET N-CH 55V 44A IPAK Infineon Technologies |
3,530 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
IRFIZ46NPBFMOSFET N-CH 55V 33A TO220AB FP Infineon Technologies |
2,162 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 10V | 20mOhm @ 19A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
IRFZ46NSPBFMOSFET N-CH 55V 53A D2PAK Infineon Technologies |
4,222 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1696 pF @ 25 V | - | 3.8W (Ta), 107W (Tc) | - | - | - | Surface Mount | D2PAK |
|
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IRL540NSPBFMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
3,619 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74 nC @ 5 V | ±16V | 1800 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRLI2910PBFMOSFET N-CH 100V 31A TO220AB FP Infineon Technologies |
3,433 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRFL1006PBFMOSFET N-CH 60V 1.6A SOT223 Infineon Technologies |
4,307 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8 nC @ 10 V | ±20V | 160 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRFZ46ZSPBFMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
3,234 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRLI3803PBFMOSFET N-CH 30V 76A TO220AB FP Infineon Technologies |
4,250 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 76A (Tc) | 4.5V, 10V | 6mOhm @ 40A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRLU3802PBFMOSFET N-CH 12V 84A I-PAK Infineon Technologies |
3,547 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 84A (Tc) | 2.8V, 4.5V | 8.5mOhm @ 15A, 4.5V | 1.9V @ 250µA | 41 nC @ 5 V | ±12V | 2490 pF @ 6 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
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IRFL024NPBFMOSFET N-CH 55V 2.8A SOT223 Infineon Technologies |
2,985 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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