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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRL2203NPBFMOSFET N-CH 30V 116A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 1V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL3303PBFMOSFET N-CH 30V 38A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL530NPBFMOSFET N-CH 100V 17A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFP4710PBFMOSFET N-CH 100V 72A TO247AC Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 72A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170 nC @ 10 V | ±20V | 6160 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFB59N10DPBFMOSFET N-CH 100V 59A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFU024NPBFMOSFET N-CH 55V 17A IPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 370 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRLR120NPBFMOSFET N-CH 100V 10A DPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF3710SPBFMOSFET N-CH 100V 57A D2PAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR18N15DPBFMOSFET N-CH 150V 18A DPAK Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRL1104PBFMOSFET N-CH 40V 104A TO220AB Infineon Technologies |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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