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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLR4343TRLMOSFET N-CH 55V 26A DPAK Infineon Technologies |
3,933 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRF540ZSTRRMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
2,850 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF6620TR1MOSFET N-CH 20V 27A DIRECTFET Infineon Technologies |
4,210 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250µA | 42 nC @ 4.5 V | ±20V | 4130 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRF6691TR1MOSFET N-CH 20V 32A DIRECTFET Infineon Technologies |
4,498 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71 nC @ 4.5 V | ±12V | 6580 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
|
IRFR120ZTRLMOSFET N-CH 100V 8.7A DPAK Infineon Technologies |
4,859 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
64-9146MOSFET N-CH 20V 32A DIRECTFET Infineon Technologies |
2,799 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71 nC @ 4.5 V | ±12V | 6580 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IRFB4215MOSFET N-CH 60V 115A TO220AB Infineon Technologies |
3,290 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 115A (Tc) | 10V | 9mOhm @ 54A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRFR5305PBFMOSFET P-CH 55V 31A DPAK Infineon Technologies |
3,317 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRL3803SPBFMOSFET N-CH 30V 140A D2PAK Infineon Technologies |
4,717 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRFR220NPBFMOSFET N-CH 200V 5A DPAK Infineon Technologies |
2,631 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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