制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFU3303PBFMOSFET N-CH 30V 33A IPAK Infineon Technologies |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFI1010NPBFMOSFET N-CH 55V 49A TO220AB FP Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 12mOhm @ 26A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRF1010EZSPBFMOSFET N-CH 60V 75A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRL3103PBFMOSFET N-CH 30V 64A TO220AB Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33 nC @ 4.5 V | ±16V | 1650 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFZ48NSPBFMOSFET N-CH 55V 64A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFIB41N15DPBFMOSFET N-CH 150V 41A TO220AB FP Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110 nC @ 10 V | ±20V | 2520 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRFR12N25DPBFMOSFET N-CH 250V 14A DPAK Infineon Technologies |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRLIZ44NPBFMOSFET N-CH 55V 30A TO220AB FP Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4V, 10V | 22mOhm @ 17A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRFIZ48VPBFMOSFET N-CH 60V 39A TO220AB FP Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 39A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1985 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRLI540NPBFMOSFET N-CH 100V 23A TO220AB FP Infineon Technologies |
0 | - |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 4V, 10V | 44mOhm @ 12A, 10V | 2V @ 250µA | 74 nC @ 5 V | ±16V | 1800 pF @ 25 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |