制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRL2703PBFMOSFET N-CH 30V 24A TO220AB Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 40mOhm @ 14A, 10V | 1V @ 250µA | 15 nC @ 4.5 V | ±16V | 450 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFIZ48NPBFMOSFET N-CH 55V 40A TO220AB FP Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 40A (Tc) | 10V | 16mOhm @ 22A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRL3803LPBFMOSFET N-CH 30V 140A TO262 Infineon Technologies |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF3706PBFMOSFET N-CH 20V 77A TO220AB Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | ±12V | 2410 pF @ 10 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF3707PBFMOSFET N-CH 30V 62A TO220AB Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1990 pF @ 15 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFZ44NSPBFMOSFET N-CH 55V 49A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR3708PBFMOSFET N-CH 30V 61A DPAK Infineon Technologies |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24 nC @ 4.5 V | ±12V | 2417 pF @ 15 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFZ44NLPBFMOSFET N-CH 55V 49A TO262 Infineon Technologies |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFZ48NLPBFMOSFET N-CH 55V 64A TO262 Infineon Technologies |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF3710LPBFMOSFET N-CH 100V 57A TO262 Infineon Technologies |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |