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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPU60R2K1CEAKMA1CONSUMER Infineon Technologies |
4,491 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 38W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IRFH8325TRPBFMOSFET N-CH 30V 21A/82A PQFN Infineon Technologies |
3,667 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 82A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32 nC @ 10 V | ±20V | 2487 pF @ 10 V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IPN60R1K5PFD7SATMA1MOSFET N-CH 600V 3.6A SOT223 Infineon Technologies |
2,460 |
|
Tabla de datos |
CoolMOS™PFD7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 1.5Ohm @ 700mA, 10V | 4.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 169 pF @ 400 V | - | 6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-3 |
|
IPD60R2K0PFD7SAUMA1MOSFET N-CH 600V 3A TO252-3 Infineon Technologies |
4,980 |
|
Tabla de datos |
CoolMOS™ PFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 2Ohm @ 500mA, 10V | 4.5V @ 30µA | 3.8 nC @ 10 V | ±20V | 134 pF @ 400 V | - | 20W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |
|
ISZ065N03L5SATMA1MOSFET N-CH 30V 12A/40A TSDSON Infineon Technologies |
32,216 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 2V @ 250µA | 10 nC @ 10 V | ±20V | 670 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
|
|
BSC090N03LSGATMA1MOSFET N-CH 30V 13A/48A TDSON Infineon Technologies |
21,482 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 48A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
|
IPN60R1K0PFD7SATMA1CONSUMER PG-SOT223-3 Infineon Technologies |
2,442 |
|
Tabla de datos |
CoolMOS™ PFD7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.7A (Tc) | 10V | 1Ohm @ 1A, 10V | 4.5V @ 50µA | 6 nC @ 10 V | ±20V | 230 pF @ 400 V | - | 6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
ISZ15EP15LMATMA1TRENCH >=100V Infineon Technologies |
4,871 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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ISZ040N03L5ISATMA1MOSFET N-CH 30V 18A/40A TSDSON Infineon Technologies |
19,685 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2V @ 250µA | 17 nC @ 10 V | ±20V | 1100 pF @ 15 V | - | 2.1W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
|
|
IRFH8324TRPBFMOSFET N-CH 30V 23A/90A PQFN Infineon Technologies |
5,734 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 20A, 10V | 2.35V @ 50µA | 31 nC @ 10 V | ±20V | 2380 pF @ 10 V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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