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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7353D1TRMOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
3,913 |
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Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7455MOSFET N-CH 30V 15A 8SO Infineon Technologies |
2,832 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56 nC @ 5 V | ±12V | 3480 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7603TRMOSFET N-CH 30V 5.6A MICRO8 Infineon Technologies |
2,817 |
|
Tabla de datos |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | - | 35mOhm @ 3.7A, 10V | 1V @ 250µA | 27 nC @ 10 V | - | 520 pF @ 25 V | - | - | - | - | - | Surface Mount | Micro8™ |
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IRF7604TRMOSFET P-CH 20V 3.6A MICRO8 Infineon Technologies |
3,593 |
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Tabla de datos |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | - | 90mOhm @ 2.4A, 4.5V | 700mV @ 250µA (Min) | 20 nC @ 4.5 V | - | 590 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro8™ |
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IRF7663TRMOSFET P-CH 20V 8.2A MICRO8 Infineon Technologies |
4,511 |
|
Tabla de datos |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 8.2A (Ta) | - | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45 nC @ 5 V | - | 2520 pF @ 10 V | - | - | - | - | - | Surface Mount | Micro8™ |
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IRF7807D1MOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
3,774 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Tc) | - | - | - | Surface Mount | 8-SO |
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IRF7811AMOSFET N-CH 28V 11A 8SO Infineon Technologies |
3,337 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26 nC @ 4.5 V | ±12V | 1760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7811ATRMOSFET N-CH 28V 11A 8SO Infineon Technologies |
3,364 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26 nC @ 4.5 V | ±12V | 1760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFR3303TRMOSFET N-CH 30V 33A DPAK Infineon Technologies |
3,248 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFU9120NMOSFET P-CH 100V 6.6A IPAK Infineon Technologies |
2,586 |
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Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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