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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRL2505SMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
2,992 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRL3103STRLMOSFET N-CH 30V 64A D2PAK Infineon Technologies |
3,056 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33 nC @ 4.5 V | ±16V | 1650 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRL3302SMOSFET N-CH 20V 39A D2PAK Infineon Technologies |
4,304 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 39A (Tc) | 4.5V, 7V | 20mOhm @ 23A, 7V | 700mV @ 250µA (Min) | 31 nC @ 4.5 V | ±10V | 1300 pF @ 15 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL540NSTRLMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
4,349 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | - | 44mOhm @ 18A, 10V | 2V @ 250µA | 74 nC @ 5 V | - | 1800 pF @ 25 V | - | - | - | - | - | Surface Mount | D2PAK |
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94-3316MOSFET N-CH 55V 2A SOT223 Infineon Technologies |
2,515 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 2A (Ta) | - | 140mOhm @ 2A, 10V | 2V @ 250µA | 14 nC @ 10 V | - | 230 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-223 |
|
IRLML5103TRMOSFET P-CH 30V 760MA SOT-23 Infineon Technologies |
2,723 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 760mA (Ta) | 4.5V, 10V | 600mOhm @ 600mA, 10V | 1V @ 250µA | 5.1 nC @ 10 V | ±20V | 75 pF @ 25 V | - | 540mW (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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IRLML6302TRMOSFET P-CH 20V 780MA SOT-23 Infineon Technologies |
4,071 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 780mA (Ta) | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6 nC @ 4.45 V | ±12V | 97 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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IRLMS1503TRMOSFET N-CH 30V 3.2A 6-TSOP Infineon Technologies |
4,186 |
|
Tabla de datos |
- | SOT-23-6 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | - | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6 nC @ 10 V | - | 210 pF @ 25 V | - | - | - | - | - | Surface Mount | Micro6™(TSOP-6) |
|
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IRLMS6802TRMOSFET P-CH 20V 5.6A 6-TSOP Infineon Technologies |
3,714 |
|
Tabla de datos |
- | SOT-23-6 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.6A (Ta) | - | 50mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 16 nC @ 5 V | - | 1079 pF @ 10 V | - | - | - | - | - | Surface Mount | Micro6™(SOT23-6) |
|
IRLU3303MOSFET N-CH 30V 35A I-PAK Infineon Technologies |
4,445 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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