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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DDB2U80N12W3RFC39BPSA1EASY STANDARD PLUS Infineon Technologies |
4,400 |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
94-2304MOSFET N-CH 30V 116A TO220AB Infineon Technologies |
2,698 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 1V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
94-2310MOSFET N-CH 100V 17A D2PAK Infineon Technologies |
4,900 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±20V | 800 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRLML2803TRMOSFET N-CH 30V 1.2A SOT-23 Infineon Technologies |
2,400 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 910mA, 10V | 1V @ 250µA | 5 nC @ 10 V | ±20V | 85 pF @ 25 V | - | 540mW (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
|
IRL3303SMOSFET N-CH 30V 38A D2PAK Infineon Technologies |
4,304 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL3803SMOSFET N-CH 30V 140A D2PAK Infineon Technologies |
3,318 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF7421D1MOSFET N-CH 30V 5.8A 8SO Infineon Technologies |
4,677 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 35mOhm @ 4.1A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 510 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRL5602SMOSFET P-CH 20V 24A D2PAK Infineon Technologies |
3,996 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44 nC @ 4.5 V | ±8V | 1460 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF3515SMOSFET N-CH 150V 41A D2PAK Infineon Technologies |
4,154 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF7321D2MOSFET P-CH 30V 4.7A 8SO Infineon Technologies |
2,278 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34 nC @ 10 V | ±20V | 710 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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