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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPW65R050CFD7AXKSA1MOSFET N-CH 650V 45A TO247-3-41 Infineon Technologies |
198 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
IMBG65R107M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
810 |
|
Tabla de datos |
CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 24A (Tc) | 18V | 141mOhm @ 8.9A, 18V | 5.7V @ 2.6mA | 15 nC @ 18 V | +23V, -5V | 496 pF @ 400 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
IPB60R060C7ATMA1MOSFET N-CH 600V 35A TO263-3 Infineon Technologies |
475 |
|
Tabla de datos |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK (TO-263) |
|
IPW60R099C6FKSA1MOSFET N-CH 600V 37.9A TO247-3 Infineon Technologies |
611 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
|
IPTG044N15NM5ATMA1TRENCH >=100V Infineon Technologies |
1,937 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 19.4A (Ta), 174A (Tc) | 8V, 10V | 4.4mOhm @ 50A, 10V | 4.6V @ 235µA | 89 nC @ 10 V | ±20V | 7000 pF @ 75 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8 |
|
IRF250P225MOSFET N-CH 250V 69A TO247AC Infineon Technologies |
152 |
|
Tabla de datos |
StrongIRFET™ | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 250 V | 69A (Tc) | 10V | 22mOhm @ 41A, 10V | 4V @ 270µA | 96 nC @ 10 V | ±20V | 4897 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
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IPTG007N06NM5ATMA1MOSFET N-CH 60V 53A/454A HSOG-8 Infineon Technologies |
2,636 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53A (Ta), 454A (Tc) | 6V, 10V | 0.75mOhm @ 150A, 10V | 3.3V @ 280µA | 261 nC @ 10 V | ±20V | 21000 pF @ 30 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
IPP65R065C7XKSA1MOSFET N-CH 650V 33A TO220-3 Infineon Technologies |
448 |
|
Tabla de datos |
CoolMOS™ C7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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IMZA65R107M1HXKSA1MOSFET 650V NCH SIC TRENCH Infineon Technologies |
240 |
|
Tabla de datos |
CoolSIC™ M1 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | 142mOhm @ 8.9A, 18V | 5.7V @ 3mA | 15 nC @ 18 V | +23V, -5V | 496 pF @ 400 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
|
IPB156N22NFDATMA1MOSFET N-CH 220V 72A TO263-3 Infineon Technologies |
1,014 |
|
Tabla de datos |
OptiMOS™ FD | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 220 V | 72A (Tc) | 10V | 15.6mOhm @ 50A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 6930 pF @ 110 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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