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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPW65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 Infineon Technologies |
175 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
IPTG039N15NM5ATMA1TRENCH >=100V Infineon Technologies |
1,800 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Ta), 190A (Tc) | 8V, 10V | 3.9mOhm @ 50A, 10V | 4.6V @ 243µA | 93 nC @ 10 V | ±20V | 7300 pF @ 75 V | - | 3.8W (Ta), 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8 |
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IPT60R045CFD7XTMA1MOSFET N-CH 600V 52A 8HSOF Infineon Technologies |
3,920 |
|
Tabla de datos |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
AUIRF7749L2TRMOSFET N-CH 60V 36A DIRECTFET Infineon Technologies |
6,741 |
|
Tabla de datos |
OptiMOS™ | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 345A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 275 nC @ 10 V | ±20V | 10655 pF @ 25 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DirectFET™ Isometric L8 |
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IRFP4468PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
300 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 290A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPW60R099CPFKSA1MOSFET N-CH 650V 31A TO247-3 Infineon Technologies |
265 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
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IPTG011N08NM5ATMA1MOSFET N-CH 80V 42A/408A HSOG-8 Infineon Technologies |
2,859 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 42A (Ta), 408A (Tc) | 6V, 10V | 1.1mOhm @ 150A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 17000 pF @ 40 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
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IPTG210N25NM3FDATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
1,800 |
|
Tabla de datos |
OptiMOS™ 3 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.7A (Ta), 77A (Tc) | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 125 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
IPTG111N20NM3FDATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
1,726 |
|
Tabla de datos |
OptiMOS™ 3 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 10.8A (Ta), 108A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 100 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
IPP410N30NAKSA1MOSFET N-CH 300V 44A TO220-3 Infineon Technologies |
429 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 300 V | 44A (Tc) | 10V | 41mOhm @ 44A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7180 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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