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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB240N03S4LR8ATMA1MOSFET N-CH 30V 240A TO263-7 Infineon Technologies |
4,181 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 240A (Tc) | 4.5V, 10V | 0.76mOhm @ 100A, 10V | 2.2V @ 230µA | 380 nC @ 10 V | ±16V | 26000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
|
IPB120N08S403ATMA1MOSFET N-CH 80V 120A TO263-3 Infineon Technologies |
2,830 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
|
IPB180N04S302ATMA1MOSFET N-CH 40V 180A TO263-7 Infineon Technologies |
3,568 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
IRFP3703MOSFET N-CH 30V 210A TO247AC Infineon Technologies |
4,347 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPZ60R070P6FKSA1MOSFET N-CH 600V 53.5A TO247-4 Infineon Technologies |
3,108 |
|
Tabla de datos |
CoolMOS™ P6 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100 nC @ 10 V | ±20V | 4750 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IRLML2502TRMOSFET N-CH 20V 4.2A SOT-23 Infineon Technologies |
2,718 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | ±12V | 740 pF @ 15 V | - | 1.25W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SIPC26N80C3MOSFET COOL MOS 600V SAWED WAFER Infineon Technologies |
4,169 |
|
Tabla de datos |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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AUIRF5210STRLMOSFET P-CH 100V 38A D2PAK Infineon Technologies |
4,783 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 2780 pF @ 25 V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
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AIMZHN120R060M1TXKSA1SIC_DISCRETE Infineon Technologies |
2,731 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 38A (Tc) | 18V, 20V | 75mOhm @ 13A, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | +23V, -5V | 880 pF @ 800 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
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GS66502B-TRGS66502B-TR Infineon Technologies Canada Inc. |
3,032 |
|
- |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.5A (Tc) | 6V | 260mOhm @ 2.25A, 6V | 2.6V @ 1.75mA | 1.6 nC @ 6 V | +7V, -10V | 60 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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