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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB65R150CFDATMA1MOSFET N-CH 650V 22.4A D2PAK Infineon Technologies |
4,120 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRF6648TR1MOSFET N-CH 60V 86A DIRECTFET MN Infineon Technologies |
2,559 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2120 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
|
IRFP1405MOSFET N-CH 55V 95A TO247AC Infineon Technologies |
3,602 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
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IRL3705ZSTRLMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
2,409 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | - | 2880 pF @ 25 V | - | - | - | - | - | Surface Mount | D2PAK |
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ISC015N06NM5LFATMA1OPTIMOSTM5LINEARFET60V Infineon Technologies |
2,993 |
|
- |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Ta), 275A (Tc) | 10V | 1.55mOhm @ 50A, 10V | 3.45V @ 120µA | 113 nC @ 10 V | ±20V | 9000 pF @ 30 V | - | 3W (Ta), 217W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
|
IPB90R340C3ATMA1MOSFET N-CH 900V 15A D2PAK Infineon Technologies |
4,541 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IPB120N06S4H1ATMA2MOSFET N-CH 60V 120A TO263-3 Infineon Technologies |
2,359 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270 nC @ 10 V | ±20V | 21900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
|
GS-065-008-1-L-MRGS-065-008-1-L-MR Infineon Technologies Canada Inc. |
3,370 |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 8A (Tc) | 6V | 225mOhm @ 2.2A, 6V | 1.4V @ 1.74mA | 1.5 nC @ 6 V | +7V, -10V | 52 pF @ 400 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
IRF40SC240ARMA1MOSFET N-CH 40V 360A TO263-7 Infineon Technologies |
4,695 |
|
Tabla de datos |
StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 360A (Tc) | 6V, 10V | 0.65mOhm @ 100A, 10V | 3.7V @ 250µA | 458 nC @ 10 V | ±20V | 18000 pF @ 20 V | - | 2.4W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
BTS121ANKSA1MOSFET N-CH 100V 22A TO220-3 Infineon Technologies |
4,941 |
|
Tabla de datos |
TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V | 100mOhm @ 9.5A, 4.5V | 2.5V @ 1mA | - | ±10V | 1500 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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