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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP076N15N5AKSA1MOSFET N-CH 150V 112A TO220-3 Infineon Technologies |
3,260 |
|
Tabla de datos |
OptiMOS™ 5 | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10 | 4.6V @ 160µA | 21 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
ISC035N10NM5LFATMA1OPTIMOSTM5LINEARFET100V Infineon Technologies |
4,485 |
|
- |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 164A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 3.9V @ 115µA | 88 nC @ 10 V | ±20V | 7200 pF @ 50 V | - | 3W (Ta), 217W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IRLI2505MOSFET N-CH 55V 58A TO220AB FP Infineon Technologies |
3,912 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 58A (Tc) | 4V, 10V | 8mOhm @ 31A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRF60SC241ARMA1MOSFET N-CH 60V 360A TO263-7 Infineon Technologies |
4,928 |
|
Tabla de datos |
StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 360A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.7V @ 250µA | 388 nC @ 10 V | ±20V | 16000 pF @ 30 V | - | 2.4W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
IRF7749L2TRPBFMOSFET N-CH 60V 33A DIRECTFET Infineon Technologies |
3,837 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 33A (Ta), 375A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 12320 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
|
IRF7769L2TRPBFMOSFET N-CH 100V 375A DIRECTFET Infineon Technologies |
4,581 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 11560 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
IRFP2907ZPBFMOSFET N-CH 75V 90A TO247AC Infineon Technologies |
1 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
IRL60SC216ARMA1MOSFET N-CH 60V 324A TO263-7 Infineon Technologies |
3,244 |
|
Tabla de datos |
StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 324A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2.4V @ 250µA | 218 nC @ 4.5 V | ±20V | 16000 pF @ 30 V | - | 2.4W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
SPB20N60S5ATMA1MOSFET N-CH 600V 20A TO263-3 Infineon Technologies |
4,950 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRLBA1304PMOSFET N-CH 40V 185A SUPER-220 Infineon Technologies |
3,730 |
|
Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 7660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
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