Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF1404ZMOSFET N-CH 40V 160A TO220AB Infineon Technologies |
3,974 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPA60R099C6XKSA1MOSFET N-CH 600V 37.9A TO220-FP Infineon Technologies |
2,219 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPC302N25N3AX1SA1MOSFET N-CH 250V 1A SAWN ON FOIL Infineon Technologies |
3,451 |
|
- |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 250 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
|
IAUA250N04S6N007AUMA1MOSFET_(20V 40V) PG-HSOF-5 Infineon Technologies |
4,919 |
|
- |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 435A (Tj) | 7V, 10V | 0.7mOhm @ 100A, 10V | 3V @ 130µA | 151 nC @ 10 V | ±20V | 9898 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
|
|
AIMZHN120R120M1TXKSA1SIC_DISCRETE Infineon Technologies |
4,489 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | +23V, -5V | 458 pF @ 800 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
IRF2804STRL-7PMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
2,166 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRFS3307MOSFET N-CH 75V 130A D2PAK Infineon Technologies |
4,877 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPB160N04S2L03ATMA2MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
3,558 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 5 V | ±20V | 6000 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
|
|
IPB180N03S4L01ATMA1MOSFET N-CH 30V 180A TO263-7 Infineon Technologies |
4,145 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 1.05mOhm @ 100A, 10V | 2.2V @ 140µA | 239 nC @ 10 V | ±16V | 17600 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
IRF3805LPBFMOSFET N-CH 55V 75A TO262 Infineon Technologies |
4,208 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 7960 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
