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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF1010ZSTRLMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
4,824 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IRL3402SMOSFET N-CH 20V 85A D2PAK Infineon Technologies |
4,908 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA (Min) | 78 nC @ 4.5 V | ±10V | 3300 pF @ 15 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPLK70R600P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
4,829 |
|
Tabla de datos |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
|
IPI60R250CPAKSA1MOSFET N-CH 650V 12A TO262-3 Infineon Technologies |
2,418 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35 nC @ 10 V | ±20V | 1200 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IRFI520NMOSFET N-CH 100V 7.6A TO220AB FP Infineon Technologies |
2,662 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.6A (Tc) | 10V | 200mOhm @ 4.3A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
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IRFZ44VSMOSFET N-CH 60V 55A D2PAK Infineon Technologies |
3,517 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 10V | 16.5mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1812 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPI65R190C6XKSA1MOSFET N-CH 650V 20.2A TO262-3 Infineon Technologies |
4,434 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPB039N10N3GE8187ATMA1MOSFET N-CH 100V 160A TO263-7 Infineon Technologies |
4,767 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 6V, 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 160µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
IPC218N04N3X7SA1MV POWER MOS Infineon Technologies |
2,712 |
|
Tabla de datos |
OptiMOS™ 3 | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | - | 10V | 50mOhm @ 2A, 10V | 4V @ 200µA | - | - | - | - | - | - | - | - | Surface Mount | Die |
|
IPD053N08N3GBTMA1MOSFET N-CH 80V 90A TO252-3 Infineon Technologies |
4,474 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 90A (Tc) | 6V, 10V | 5.3mOhm @ 90A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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