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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP17N25S3100AKSA1MOSFET N-CH 250V 17A TO220-3 Infineon Technologies |
3,233 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 17A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 54µA | 19 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRF7463MOSFET N-CH 30V 14A 8SO Infineon Technologies |
2,677 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 2.7V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 51 nC @ 4.5 V | ±12V | 3150 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7460MOSFET N-CH 20V 12A 8SO Infineon Technologies |
4,686 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 2050 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7466MOSFET N-CH 30V 11A 8SO Infineon Technologies |
4,395 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23 nC @ 4.5 V | ±20V | 2100 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7467MOSFET N-CH 30V 11A 8SO Infineon Technologies |
2,920 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32 nC @ 4.5 V | ±12V | 2530 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF1104STRLMOSFET N-CH 40V 100A D2PAK Infineon Technologies |
4,323 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF3808LPBFMOSFET N-CH 75V 106A TO262 Infineon Technologies |
3,364 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 5310 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF6609TR1MOSFET N-CH 20V 31A DIRECTFET Infineon Technologies |
3,170 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 31A, 10V | 2.45V @ 250µA | 69 nC @ 4.5 V | ±20V | 6290 pF @ 10 V | - | 1.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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IRF6678TR1MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
2,291 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRFB3006PBFXKMA1TRENCH 40<-<100V Infineon Technologies |
2,859 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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