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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7463TRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
3,839 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 2.7V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 51 nC @ 4.5 V | ±12V | 3150 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRLR120NTRLPBFMOSFET N-CH 100V 10A DPAK Infineon Technologies |
3,560 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSC048N025S GMOSFET N-CH 25V 19A/89A TDSON Infineon Technologies |
2,744 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 89A (Tc) | 4.5V, 10V | 4.8mOhm @ 50A, 10V | 2V @ 35µA | 21 nC @ 5 V | ±20V | 2670 pF @ 15 V | - | 2.8W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
IRFH5304TR2PBFMOSFET N-CH 30V 22A 8VQFN Infineon Technologies |
2,092 |
|
Tabla de datos |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 79A (Tc) | - | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41 nC @ 10 V | - | 2360 pF @ 10 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
|
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IPD90R1K2C3ATMA1MOSFET N-CH 900V 5.1A TO252-3 Infineon Technologies |
4,716 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
SPA15N60CFDXKSA1MOSFET N-CH 650V 13.4A TO220-FP Infineon Technologies |
3,780 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IRL3103D1SMOSFET N-CH 30V 64A D2PAK Infineon Technologies |
3,742 |
|
Tabla de datos |
FETKY™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43 nC @ 4.5 V | ±16V | 1900 pF @ 25 V | - | 3.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF7809TRMOSFET N-CH 30V 17.6A 8SO Infineon Technologies |
3,135 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.6A (Ta) | 4.5V | 7.5mOhm @ 15A, 4.5V | 1V @ 250µA | 86 nC @ 5 V | ±12V | 7300 pF @ 16 V | - | 3.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6607TR1MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies |
2,967 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 94A (Tc) | 4.5V, 7V | 3.3mOhm @ 25A, 10V | 2V @ 250µA | 75 nC @ 4.5 V | ±12V | 6930 pF @ 15 V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
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IRF3205STRRMOSFET N-CH 55V 110A D2PAK Infineon Technologies |
4,173 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±20V | 3247 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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